【行业资讯】高功率RF放大器的发展趋势

“Communications High Power RF Amplifiers”（通信用高功率射频放大器，简称高功率RF放大器）作为无线通信领域的核心技术之一，其发展趋势主要体现在以下几个方面：

一、技术性能的提升

高集成度和小尺寸化：

随着无线通信设备的小型化和多功能化需求的增加，高功率RF放大器需要在有限的空间内实现更高的性能。因此，高集成度和小尺寸化成为重要的发展方向。通过微缩制造工艺和先进的封装技术，可以实现更高的集成度和更小的尺寸，从而满足设备小型化的需求。

功耗降低和能效提高：

移动通信设备的普及和无线物联网的兴起对电池寿命和能源管理提出了更高要求。高功率RF放大器在保证性能的同时，需要尽可能降低功耗，提高能效。通过采用低功耗设计和优化电路结构，可以在保持高性能的同时，延长电池寿命，提高能源利用效率。

二、频谱资源的优化利用

高效利用频谱和频段拓展：

随着无线通信用户的不断增加和频谱资源的有限性，高功率RF放大器需要通过高效利用频谱和拓展频段来满足日益增长的通信需求。通过采用先进的调制技术和频谱管理策略，可以实现更高的频谱利用率和更广泛的频段覆盖，提供更快速、稳定和可靠的通信服务。

三、安全性和隐私保护的加强

加强通信安全和隐私保护：

随着无线通信的普及和物联网的发展，对通信安全和用户隐私的保护要求越来越高。高功率RF放大器需要具备安全认证和加密功能，保护通信数据的安全性和用户隐私的保密性。通过采用先进的加密算法和安全认证技术，可以提供更高的安全性和隐私保护水平，保障用户的通信安全和隐私权益。

四、市场与应用的发展

市场需求增长：

移动通信技术的快速发展和智能设备的普及推动了高功率RF放大器市场的持续增长。特别是在5G商用和普及的背景下，具备无线通信功能的终端设备种类愈加丰富，对高功率RF放大器的需求也将不断增加。

应用领域的拓展：

除了传统的移动通信领域外，高功率RF放大器在物联网、智能交通、航空航天等领域的应用也将不断拓展。例如，在物联网领域，高功率RF放大器可以支持更多的终端设备接入网络，实现更广泛的物联网覆盖；在智能交通领域，高功率RF放大器可以支持车联网通信，提高交通系统的智能化和安全性。

五、技术创新与研发

新材料和新工艺的应用：

随着材料科学和工艺技术的不断进步，新型材料和工艺在高功率RF放大器中的应用将越来越多。例如，采用新型半导体材料（如氮化镓GaN）可以提高RF放大器的功率密度和效率；采用先进的制造工艺（如3D封装技术）可以提高RF放大器的集成度和性能。

智能化和自动化：

随着人工智能和自动化技术的不断发展，高功率RF放大器的设计、生产和测试过程也将更加智能化和自动化。通过引入智能化设计软件、自动化生产线和测试设备等技术手段，可以提高RF放大器的设计效率、生产效率和测试精度。

综上所述，“Communications High Power RF Amplifiers”技术领域的发展趋势包括技术性能的提升、频谱资源的优化利用、安全性和隐私保护的加强、市场与应用的发展以及技术创新与研发等多个方面。这些趋势将共同推动高功率RF放大器技术的不断进步和发展。

通信用高功率射频功率放大器设计洞察

通信用高功率射频功率放大器设计示例---Quantic Corry公司的高功率射频放大器

关键规格

图，Quantic Corry公司的高功率射频放大器

Corry Micronics 提供一系列高功率射频放大器，工作频率范围为 869 GHz 至 2170 GHz，标称输出功率为 32 W 或 45 W。支持的信号类型包括 GSM、LTE 和 UMTS 型号。并且提供控制和监控功能。

Quantic Corry公司的高功率射频放大器的主要特点包括：

Quantic Corry公司的高功率射频放大器的典型应用包括：

Quantic Corry公司的高功率射频放大器的典型型号：

部件型号

信号类型

最小频率 (MHz)

最大频率 (MHz)

标称输出功率（W）

标称增益 (dB)

控制和监控功能

GSM 935-960-32

GSM

935

960

32

33

是

GSM 1805-1880-32

GSM

1805

1880

32

33

是

LTE 869-894-45

LTE

869

894

45

51

是

LTE 1805-1880-45

LTE

1805

1880

45

51

是

UMTS 935-960-45

UMTS

935

960

45

44

是

UMTS 2110-2170-45

UMTS

2110

2170

45

44

是

高功率射频放大器的论文发表情况：

下面是有关高功率射频放大器的设计和应用的部分论文，需要完整的论文集表单可以私信给我：

研究论文标题

发表时间

摘要

A Linear and Non Linear Analysis of High Power RF Amplifiers

1983

After a survey of the state variable analysis method the final amplifier for the CBA is analyzed taking into account the real beam waveshape. An empirical method for checking the stability of a non linear system is also considered.

Analog predistortion linearizer for high power rf amplifier

Analog predistortion linearizer for the high power amplifier of CDMA base station has been developed. To suppress the spectral regrowth in the adjacent channel effectively, the odd order intermodulation distortions should be cancelled. For the purpose, the predistorter, which can cancel the 3rd and 5th intermodulation distortions independently, has been employed. The implemented pre-distorter linearized the RF amplifier with average power 45 dBm at 2.37-2.4 GHz band. 9 dB suppression of spectral regrowth was achieved for CDMA signal over 30 MHz bandwidth.

Low SAR 31P (multi-echo) spectroscopic imaging using an integrated whole-body transmit coil at 7T

2019

Phosphorus (31P) MRSI provides opportunities to monitor potential biomarkers. However, current applications of 31P MRS are generally restricted to relatively small volumes as small coils are used. Conventional surface coils require high energy adiabatic RF pulses to achieve flip angle homogeneity, leading to high specific absorption rates (SARs), and occupy space within the MRI bore. A birdcage coil behind the bore cover can potentially reduce the SAR constraints massively by use of conventional amplitude modulated pulses without sacrificing patient space. Here, we demonstrate that the integrated 31P birdcage coil setup with a high power RF amplifier at 7 T allows for low flip angle excitations with short repetition time (TR) for fast 3D chemical shift imaging (CSI) and 3D T1-weighted CSI as well as high flip angle multi-refocusing pulses, enabling multi-echo CSI that can measure metabolite T2, over a large field of view in the body. B1 + calibration showed a variation of only 30% in maximum B1 in four volunteers. High signal-to-noise ratio (SNR) MRSI was obtained in the gluteal muscle using two fast in vivo 3D spectroscopic imaging protocols, with low and high flip angles, and with multi-echo MRSI without exceeding SAR levels. In addition, full liver MRSI was achieved within SAR constraints. The integrated 31P body coil allowed for fast spectroscopic imaging and successful implementation of the multi-echo method in the body at 7 T. Moreover, no additional enclosing hardware was needed for 31P excitation, paving the way to include larger subjects and more space for receiver arrays. The increase in possible number of RF excitations per scan time, due to the improved B1 + homogeneity and low SAR, allows SNR to be exchanged for spatial resolution in CSI and/or T1 weighting by simply manipulating TR and/or flip angle to detect and quantify ratios from different molecular species.

Analog predistortion linearizer for high-power RF amplifiers

2000

We have developed an analog predistortion linearizer for a high-power amplifier of a code-division multiple-access (CDMA) base station. To effectively suppress the spectral regrowth in the adjacent channels, the odd-order intermodulation distortions (IMDs) should be cancelled. To accomplish this purpose, we employed a predistorter, which can cancel the third and fifth IMDs independently. The implemented predistorter linearized the RF amplifier with an average power of 45 dBm at 2.37-2.4-GHz band. A 9-dB suppression of spectral regrowth, from 33 to 42 dBc, was achieved for the CDMA signal with an 8.192-Mc/s chip rate over a 30-MHz bandwidth.

Experimental Characterization of the Thermal Time Constants of GaN HEMTs Via Micro-Raman Thermometry

2017

Gallium nitride (GaN) high-electron mobility transistors (HEMTs) are a key technology for realizing next generation high-power RF amplifiers and high-efficiency power converters. However, elevated channel temperatures due to self-heating often severely limit their power handling capability. Although the steady-state thermal behavior of GaN HEMTs has been studied extensively, significantly fewer studies have considered their transient thermal response. In this paper, we report a methodology for measuring the transient temperature rise and thermal time constant spectrum of GaN HEMTs via time-resolved micro-Raman thermometry with a temporal resolution of 30 ns. We measured a broad spectrum of time constants from $\approx 130$ ns to $\approx 3.2$ ms that contribute to the temperature rise of an ungated GaN-on-SiC HEMT due to aggressive, multidimensional heat spreading in the die and die-attach. Our findings confirm previous theoretical analysis showing that one or two thermal time constants cannot adequately describe the transient temperature rise and that the temperature reaches steady-state at $\approx {16}L^{{2}}/\pi ^{{2}}\alpha $ , where $L$ and ${\alpha }$ are the thickness and thermal diffusivity of the substrate. This paper provides a practical methodology for validating transient thermal models of GaN HEMTs and for obtaining experimental values of the thermal resistances and capacitances for compact electrothermal modeling.

Reliable procedure for electrical characterization of MOS-based devices

2010

High power RF amplifier's new nonlinear models

By carefully analysis measured data of power amplifier, this paper presents three new models. Model A uses Saleh function in traditional orthogonal bandpass model to increase accuracy. Model B uses an inverse tangent function to model RF power amplifier's AM-AM nonlinear behavior. Model C uses inverse tangent function in traditional orthogonal bandpass model to model power amplifier's AM-AM and AM-PM nonlinearity. Emulation shows that each model has its features, and model C gives the best performance.

Conformal Space-Charge Limited Emission Modeling in the Neptune Em-Pic Code *

2021

Electromagnetic Particle-in-Cell (EM-PIC) simulations of modern high-power RF amplifiers and sources have seen considerable advances in the last decade in both solution accuracy and execution time. Electromagnetic "cut-cell" algorithms capture complex device geometry conformally on 3D Cartesian grids, while EM-PIC simulation codes have been optimized for multi-core CPUs and GPU accelerators. One challenge that remains is numerically modeling the interaction of particles and fields near cut-cell boundaries, where accurately interpolating near-surface fields from the Cartesian grid presents a challenge. Of particular relevance to device simulation is modeling space-charge limited (SCL) emission from arbitrary curved surfaces, both accurately and self-consistently, to correctly determine the emitted current distribution.

Neural network based adaptive predistortion for the linearization of nonlinear RF amplifiers

The good spectral efficiency of linear modulation techniques makes them attractive for use in high data rate digital radio systems. Unfortunately, the fluctuating envelopes of such systems combined with the nonlinear nature of the high power RF amplifiers commonly used gives rise to spectral spreading, adjacent channel interference, I-Q crosstalk, and degraded bit error rates. A possible solution to these problems is the linearization of the transmitter system by predistortion of the baseband digital signal using a nonlinear filter which is the inverse of the amplifier response. We realize the inverse filter using a backpropagation neural network. A coupler and demodulator provide a feedback path which provides the input to the neural network while the desired signal is the original waveform. The shaped waveform is passed through the network which adaptively corrects for the changing response of the high power RF amplifier. This technique allows us to correct for quite general nonlinearities, significantly reduce spectral spreading, and to improve the bit error rate.

FPGA-Based RF and Piezocontrollers for SRF Cavities in CW Mode

2017

Modern digital low level radio frequency (RF) control systems used to stabilize the accelerating field in facilities, such as free electron laser in Hamburg or the European X-ray free electron laser, are based on the field programmable gate array (FPGA) technology. Presently, these accelerator facilities are operated with pulsed RF. In the future, these facilities will operate with the continuous wave (CW), which requires significant modifications on the real-time feedbacks realized within the FPGA. For example, higher loaded quality factor of the superconducting RF cavities operated in the CW mode requires sophisticated resonance control methods. However, iterative learning techniques widely used for machines operated in pulsed mode are not applicable for the CW. In addition, the mechanical characteristic of the cavities now have a much more important impact on the choice of the feedback scheme. To overcome the limitations of classical proportional-integral controllers, a novel real-time adaptive feed-forward algorithm is implemented in the FPGA. Also, the high power RF amplifier, which is an inductive output tube (IOT) for CW operation instead of a klystron for the pulsed mode, has a major impact on the design and implementation of the firmware for regulation. In this paper, we report on our successful approach to control the multicavity vector sum with an ultrahigh precision (amplitude error <;0.01% rms and phase stability <;0.02° rms), using a single IOT source and the individual resonance control through piezoactuators. Performance measurements of the proposed solution were conducted at the cryomodule test bench facility.

Digital linearizer for RF amplifiers

1997

Broadcast technology is at the beginning of a new era. It is characterized by the intensive use of the most advanced digital modulation formats (8VSB, QAM, OFDM) in combination with high power RF amplifiers. To date the linearity required for these digital formats has only been accomplished in cumbersome low efficiency class A amplifier or even more cumbersome feed-forward systems. A potentially more efficient and cost effective approach is the combination of nonlinear power amplifiers and a predistortion technique capable of compensating for the nonlinear amplifiers. Digital predistortion will provide a highly linear output and improved efficiency. Itelco has developed a digital adaptive base band predistorter to provide for improved performance and cost. The technique is independent of the modulation type, the output frequency, or the signal bandwidth. Furthermore the capability of automatic adaptive predistortion to compensate for the environment (temperature, power supply variations, aging, and even operation during replacement of a faulty module) is highly desirable.

An 80% power efficient, 125-Watt, GaN-based RF power amplifier designed for continuous duty and linear operation on L-band

2013

This paper describes the design, simulation and implementation of a high power RF amplifier operating at 1315 MHz using a single, state-of-the-art GaN HEMT transistor. The design technique described is entirely based on computer modeling instead of measured load and source-pull impedances, resulting in 125 W of saturated CW output power at 80% efficiency and 100% duty cycle, while also meeting typical WCDMA signal spectral mask requirements without the aid of a linearizer at 5.6 dB output power back-off.

Advances in high power rf amplifiers

1979

Several powerful accelerators and storage rings are being considered that will require tens or even hundreds of megawatts of continuous rf power. The economics of such large machines can be dictated by the cost and efficiency of the rf amplifiers. The overall design and performance of such narrow-band amplifiers, operating in the 50- to 1500-MHz region, are being theoretically studied as a function of frequency to determine the optimum rf amplifier output power, gain, efficiency, and dc power requirements. The state of the art for three types of amplifiers (gridded tubes, klystrons, and gyrocons) is considered and the development work necessary to improve each is discussed. The gyrocon is a new device, hence its various embodiments are discussed in detail. The Soviet designs are reviewed and the gyrocon's strengths and weaknesses are compared to other types of microwave amplifiers. The primary advantages of the gyrocon are the very large amount of power available from a single device and the excellent efficiency and stable operation. The klystron however, has much greater gain and is simpler mechanically. At very low frequencies, the small size of the gridded tube makes it the optimum choice for all but the most powerful systems.

High-pressure, high-repetition-rate RF CO2 laser

1991

Systematic Approach for Design of Broadband, High Efficiency, High Power RF Amplifiers

2017

Diamond FinFET without Hydrogen Termination.

2018

In this letter we report the first diamond fin field-effect transistor (diamond FinFET) without a hydrogen-terminated channel. The device operates with hole accumulation by metal-oxide-semiconductor (MOS) structures built on fins to maintain effective control of the channel conduction. Devices with 100-nm—wide fins were designed and fabricated to ensure that the channel pinched off at zero gate bias. The transfer characteristic of FinFET showed a greater than 3000 on/off ratio, successfully demonstrating the transistor behavior. Devices were characterized at room temperature and at 150 °C, showing 30 mA/mm current density at 150 °C, 35 times more than current density at room temperature. The diamond FinFET, which leverages the fin concept from the silicon industry and the material advance of diamond, enables a new class of diamond transistors for applications from digital to power and radio frequency (RF) electronics.

TFTR ICRF generator systems

The design and performance of the Tokamak Fusion Test Reactor (TFTR) ion cyclotron range of frequencies (ICRF) generators and the overall RF system which controls multiple sources to provide 10 MW of ICRF power to the TFTR are discussed. Two 3.0-MW amplifiers operating at 47 MHz were designed and built. Their design is discussed in detail. Two 2.0-MW amplifiers tunable over the 40 MHz to 80 MHz range were designed to upgrade systems originally built for use on the Fusion Materials Irradiation Test Facility (FMIT). Design details of these systems are shown along with the characteristics of an experimental tetrode vacuum tube, designated the X-2242, developed for these systems. Operation of several high-power RF sources into single or coupled antennas in the TFTR vacuum vessel requires tight phase and amplitude control of each source to achieve an impedance match to the plasma. The method of controlling the amplifiers using phase-locked loops and amplitude feedback loops around each amplifier system is shown in detailed block diagram form. Final performance characteristics for the amplifiers operating singly and in combination into dummy loads are presented. Several problems peculiar to tokamak plasma loads are discussed in regard to their effect on the design and performance of the high-power RF amplifiers. >

Defining a coupling coefficient for rock samples in a parallel-plate capacitor

2012

A solid state high-power RF amplifier for pulsed NMR

1979

An amplifier capable of providing greater than 3 kW into a 50 Omega load is described. The unit, which is of modular construction, operates over the frequency range 1-22 MHz and is designed for a nuclear magnetic resonance imaging experiment. Each module produces up to 800 W peak pulse power for a 5% duty cycle. The module outputs are combined in a five-port hybrid combiner to generate the full output power. Particular attention is paid to the circuitry used to protect the high-power output stages.

Investigation on Output Capacitance Losses in Superjunction and GaN-on-Si Power Transistors

2020

Low ON-resistance of advanced superjunction (SJ) and GaN-on-Si transistors is of great importance in power converters, however, the anomalous loss in their output capacitance (C OSS ) severely limits their performance. In this work, we use an energy-oriented measurement technique providing high voltage swings, high frequencies, and high values of dv/dt, which unlike Sawyer Tower, works without any pre-assumptions about circuit model of the transistor under test. This measurement method just relies on a low-voltage dc supply without the need of a high-power RF amplifier. In contrast with previous studies, the method shows that the small-signal E OSS of SJ devices is not necessarily different from the one measured at large-signal domain. However, the reported E OSS in datasheets might correspond to the discharging cycle, which is considerably lower than the actual E OSS needed to charge C OSS . Measurements on enhancement-mode GaN-on-Si power transistors give insights on the possible relation between C OSS -losses and dynamic RON degradation, as the two main phenomena hindering the performance of GaN transistors at high switching frequencies. These results give useful guidelines in utilizing and optimizing power transistors, especially at high-frequency operation.

ISCAS (1) - A new non-iterative, adaptive baseband predistortion method for high power rf amplifiers

In this paper a digital baseband predistorter based on a noniterative adaptation method is presented. In the proposed solution, there are no convergence constrains and the loop delay has to be estimated only once, in advance of the training process. In addition, the gain table is directly extracted in rectangular form overcoming the need of a sequential extraction of the AM/AM and AM/PM gain table, while any polar to rectangular gain transformation is eliminated. Experimental measurements of an in-house prototype of the method show a linearity improvement better than 25 dB.

Adaptive junction temperature cooling to enable the next-generation of single-assembly solid-state high-power RF amplifiers

2011

Large area integration of embedded high power RF amplifiers in a thin organic panel

2009

The advent of highly efficient wide band-gap Monolithic Microwave Integrated Circuits (MMICs) allows for low cost packaging of amplifiers with antennas in a single multi-layer panel. This paper reports on the design, fabrication, and measurement of a panelized Transmit/Receive (T/R) array designed for a Digital Array Radar (DAR) at 3.3 GHz. This panel uses simplified plastic packaging for high performance Gallium Nitride (GaN) amplifiers to remove heat in a very simple and effective manner. This integration approach is shown to keep the high power amplifiers cool enough to maintain optimal performance and transmit an instantaneous power of over 25 watts per element.

Design and development of high power RF amplifier for 88 in. room temperature cyclotron at Variable Energy Cyclotron Centre (VECC), Kolkata.

2020

A tetrode based high power radio frequency (RF) amplifier has been designed, developed, and commissioned at Variable Energy Cyclotron Centre, Kolkata, India, for the 88-in. room temperature K130 cyclotron. The amplifier feeds power to a RF cavity based on the quarter-wave cantilever-type resonating structure to develop a high accelerating voltage for particle acceleration. The initial design of this amplifier was based on tetrode tube, which has already become obsolete. A new design of the RF amplifier has been made with a different tetrode of much lower power to satisfy the requirement of the cyclotron. This paper gives detailed insight into the various issues of the tetrode amplifier design and operational experience for the K130 cyclotron RF system.

Test stand for conditioning high power tetrodes at TRIUMF

2024

<jats:title>Abstract</jats:title>; <jats:p>A major part of the 520 MeV Cyclotron’s RF system is the high-power RF amplifier. The amplifier is based on eight 4CW250,000B tetrodes. A new high-power tetrode or a high-power tetrode that underwent refurbishing could trip the RF system through inner sparks. The likelihood of those sparks should be reduced prior to applying nominal power to the new and refurbished tetrodes. This could be achieved by RF conditioning of these tetrodes on a test stand. The test stand represents a 150 kW RF amplifier loaded by a dummy load. The amplifier is built using common grid schematics. The test stand’s output stage incorporates the 4CW250,000B tetrode that is under test. This paper describes the mechanical and electrical designs of the test stand, procedures of testing and conditioning for 4CW250,000B tetrodes, and the results of test stand’s commissioning.</jats:p>

Computer-aided design of RF MOSFET power amplifiers

1992

The process of designing high power RF amplifiers has in the past relied heavily on measurements, in conjunction with simple linear theory. With the advent of the harmonic balance method and increasingly faster computers, CAD techniques can be of great value in designing these nonlinear circuits. Relatively little work has been done in modelling RF power MOSFETs. The methods described in numerous papers for the nonlinear modelling of microwave GaAsFETs cannot be applied easily to these high power devices. This thesis describes a modelling procedure applicable to RF MOSFETs rated at over 100 W. This is achieved by the use of cold S parameters and pulsed drain current measurements taken at controlled temperatures. A method of determining the required device thermal impedance is given. A complete nonlinear equivalent circuit model is extracted for an MRF136 MOSFET, a 28 V, 15 W device. This includes two nonlinear capacitors. An equation is developed to describe accurately the drain current as a function of the internal gate and drain voltages. The model parameters are found by computer optimisation with measured data. Techniques for modelling the passive components in RF power amplifiers are given. These include resistors, inductors, capacitors, and ferrite transformers. Although linear ferrite transformer models are used, nonlinear forms are also investigated. The accuracy of the MOSFET model is verified by comparison to large signal measurements in a 50 0 system. A complete power amplifier using the MRF136, operating from 118 MHz to 175 MHz is built and analysed. The accuracy of predictions is generally within 10 % for output power and DC supply current, and around 30 % for input impedance. An amplifier is designed using the CAD package, and then built, requiring only a small final adjustment of the input matching circuit. The computer based methods described lead quickly to a near-optimal design and reduce the need for extensive high power measurements. The use of nonlinear analysis programs is thus established as a valuable design tool for engineers working with RF power amplifiers. 11

New circulator structure with high isolation for time division duplexing radio systems

In this paper, we have proposed the new loop circulator structure with high isolation for time division duplexing (TDD) mobile radio system such as the high speed portable internet service (WiBro) in Korea. It is the important factor to isolate between the transmit signal and the receive signal for TDD system, because the white noise generated by the transmitter affect the noise figure of receiver system during the receiving period. Therefore, new technique to increase the isolation of a circulator is presented as adding the two additional circulators to the antenna port and the receiver input port, respectively. Because a proposed structure has twice isolation value than that of the single circulator, it has advantage for a high power TDD system for which a RF switch can not be used. about 20dB, the thermal noise amplified by the high power RF amplifier can be injected to the receiver during the receiving period. Besides, high RF power signal is leaked by a circulator with low isolation during the transmitting period and the receiver can be damaged. Accordingly, an additional device for protecting the receiver is required. As above mentioned, the isolation of the time division duplexing radio system is very important to reduce the noise figure of receiver. In this paper, new technique to increase the isolation of a circulator is presented as adding the two additional circulators to the antenna port and the receiver input port. The strength of transmit signal leaked to a receiver is isolated by the isolation of two circulators, and the transmit signal reduced by the transmission loss of two circulators is radiated through the antenna. Therefore, the function of new loop circulator structure is identical to that of the conventional single circulator, but its isolation is twice than that of a single circulator.

Human rapid acquisition with relaxation enhancement imaging at 8 T without specific absorption rate violation.

1999

On the self-oscillation in a pulsed RF amplifying-accelerating system

2017

Radio Frequency Transistors: Principles and Practical Applications

2001

Understanding RF data sheet parameters DC specifications Functional characteristics for power transistors, low power transistors, linear modules, and power modules RF transistor fundamentals Transistor characteristics in specific applications Bandwidth considerations MOSFETs vs. bipolars FETs and BJTs types of transistors Comparing parameters Circuit configurations Common emitter and common source Common Base and common gate Common collector and common drain Classes of operation Forms of modulation Operating transistors in pulse mode Reliability considerations Construction techniques Types of packages Emitter/source inductance Laying out a circuit board Tips for systematic PC layout design Mounting RF devices RF modules Power amplifier design Single-ended RF amplifier designs Parallel transistor amplifiers MOSFETs Push-pull amplifiers Computer-aided design programs Circuit testing Types of low-pass filters Wideband impedance matching Conventional transformers Twisted wire transformers Transmission line transformers Equal delay transmission line transformers Power splitting and combining Basic types of power combiners In phase and 180 degree combiners 90 degree hybrids Line hybrids Ring hybrids Branch line couplers Wilkinson couplers Frequency compensation and negative feedback LDMOS high power transistors Differences between LDMOS high power transistors and bipolars Differences between LDMOS high power transistors and TMOS FETs Designing high power RF amplifiers using LDMOS Small signal amplifier design Scattering parameters Noise parameters Biasing considerations Power gain Stability Actual steps in low power amplifier design and much more

Modeling of cavity liquid cooling process for the high power RF amplifier

2010

Numerical investigation of cooling process driven by Navier-Stokes equations and k-e turbulence model is presented.

Assembling the Building Blocks for Diamond Electronics

2006

Design and performance of high voltage power supply with crowbar protection for 3-Φ high power rf amplifier system of cyclotron

2016

The superconducting cyclotron at VECC consists of three rf cavities separated at 120° and each cavity is fed power from an individual rf amplifier, based on a tetrode tube, in the frequency range of 9–27 MHz. All the three tetrode tubes are powered by individual power supplies for their biasing which are fabricated and commissioned with the rf system of the cyclotron. The dc power to the anodes of all three tubes is fed from a high voltage power supply rated at 20 kV dc, 22 A along with suitable interlocks and crowbar protection. The tubes are protected by a single ignitron based crowbar system against an internal arc fault by diverting the stored energy very fast, minimizing the deposited amount of energy at load and allowing the fault to clear. The performance and protective capability of the crowbar system is demonstrated by using wire survivability test. The design criteria of anode power supply along with the crowbar protection system, in-house development, testing and performance is presented in this paper.

CEBAF progress report

1992

At the Continuous Electron Beam Accelerator Facility (CEBAF), under construction in Newport News, Virginia, a superconducting, recirculating, cw linac will provide a nominal 4 GeV, 200 μA electron beam for distribution to simultaneous nuclear physics experiments in three end stations. As of August 1992, the 45 MeV injector†with 18 supeconducting cavities in 21/4 cryomodules identical to those being installed in the main acclerator†has completed its initial commisisioning stage and has validated systems design by meeting specifications in energy, current, and beam quality. Cryomodule production has reached a rate of two/month, 12 (of 40) linac cryomodules are installed in the 1300‐m‐circumference tunnel, and low‐power linac tests are being initiated. High‐power rf amplifiers and power supplies are installed, and checkout is proceeding. The 4800 W helium refrigeration plant is in commissioning and supports testing/commissioning operations. Helium transfer line installation is nearing completion. East arc di...

10kW Ultra-High Power RF Amplifier with 800V RF Power MOS-FET's

1986

An improved TM110 resonator for continuous-wave ENDOR studies at X-band

2007

Phase Control of RF Cavities

2016

Particle accelerators use superconducting radio frequency (RF) cavities that create extremely large electromagnetic fields to accelerate charged particles. The latest accelerators require an unprecedented level of precision in terms of particle energy, which translates into accelerating field amplitude and phase within error bounds of 0.01 % and 0.01°, respectively. To save money, it is possible to split the output of one high power controlled RF source to multiple cavities. However, in practice, all cavities are slightly different and experience different disturbances in operation. Because of an inability to quickly modulate the phase and amplitude of the individual split high power RF signals, the fields of an entire multi-cavity system are averaged and treated as one entity on which feedback control is performed at the low power input to the high power RF amplifier. The issue is compounded by the severe electrical loading that the RF cavity experiences during operation. Radiation pressure causes Lorentz force detuning, which shifts each cavity’s resonance peak, amplitude, and phase of its accelerating field in a unique way. Piezo tuners have been used to counteract Lorentz force detuning of individual cavities. This paper studies RF cavity phase control via piezo tuners. The controller designed is capable of quickly modifying the natural frequency of a cavity as a tool for modulating the phase of an RF signal. The approach is validated in hardware with a Niobium coated single-cell copper TESLA-type RF cavity.

Advances in High-Power RF Amplifiers

1979

Several powerful accelerators and storage rings are being considered that will require tens or even hundreds of megawatts of continuous rf power. The economics of such large machines can be dictated by the cost and efficiency of the rf amplifiers. The overall design and performance of such narrow-band amplifiers, operating in the 50- to 1500-MHz region, are being theoretically studied as a function of frequency to determine the optimum rf amplifier output power, gain, efficiency, and dc power requirements. The state of the art for three types of amplifiers (gridded tubes, klystrons, and gyrocons) is considered and the development work necessary to improve each is discussed. The gyrocon is a new device, hence its various embodiments are discussed in detail. The Soviet designs are reviewed and the gyrocon's strengths and weaknesses are compared to other types of microwave amplifiers. The primary advantages of the gyrocon are the very large amount of power available from a single device and the excellent efficiency and stable operation. The klystron however, has much greater gain and is simpler mechanically. At very low frequencies, the small size of the gridded tube makes it the optimum choice for all but the most powerful systems.

Trenched sinker LDMOSFET (TS-LDMOS) structure for high power amplifier application above 2 GHz

New trenched sinker LDMOSFET structure is proposed for the application of high power RF amplifier. By adopting low temperature deep trench technology, the sinker area can be shrunk down more than 70% compared with the conventional diffusion type. The RF performance of proposed device with channel width of 5 mm showed a small signal gain of 19.3 dB at 2 GHz and 14.8 dB at 3 GHz, and maximum peak power of 30 dBm at V/sub DD/ of 26 V. Furthermore, the trench sinker (or guard), that is applied to suppress the coupling between inductors, also showed a excellent blocking performance at frequency range from 0.5 GHz to 20 GHz.

图，在高功率射频放大器领域发表的会议论文数量

图

图，在高功率射频放大器领域发表的期刊论文数量

全球研究结构发表的“射频高功率放大器”方面的论文

研究机构名称

发表的论文数量

Warsaw University of Technology

华沙理工大学

5

Freescale Semiconductor

飞思卡尔半导体

3

Japan Broadcasting Corporation

日本广播公司

3

Los Alamos National Laboratory

洛斯阿拉莫斯国家实验室

3

Deutsches Elektronen-Synchrotron, Hamburg, Germany

德国汉堡德国电子同步加速器

2

Georgia Institute of Technology

佐治亚理工学院

2

Homi Bhabha National Institute

霍米巴巴国家研究所

2

Istanbul Technical University

伊斯坦布尔技术大学

2

Korea Basic Science Institute, Busan, Republic of Korea

韩国釜山韩国基础科学研究所

2

Korea University

韩国大学

2

Kyungpook National University, Daegu, Republic of Korea

韩国大邱庆北国立大学

2

Lodz University of Technology

罗兹理工大学

2

Massachusetts Institute of Technology

麻省理工学院

2

Northrop Grumman Electronic Systems

诺斯罗普·格鲁曼电子系统公司

2

PAL, Pohang, Kyungbuk, Republic of Korea

PAL，韩国庆北浦项

2

图

图，全球研究机构发表的“High Power RF Amplifiers”方面的论文数量

“High Power RF Amplifiers”领域涉及到的关键技术点

“High Power RF Amplifiers”领域涉及到关键技术点

相关论文数量

Amplifier

86

RF power amplifier

78

Electrical engineering

71

Electronic engineering

55

Engineering

53

Power (physics)

43

Radio frequency

37

Computer science

35

Materials science

35

Physics

31

Optics

18

Optoelectronics

18

Linear amplifier

16

Particle accelerator

12

Transistor

12

CMOS

11

Transmitter

11

Telecommunications

10

Klystron

9

Predistortion

9

Analytical chemistry

8

Quantum mechanics

8

Voltage

8

Beam (structure)

7

Direct-coupled amplifier

7

Baseband

6

Control system

6

Electronic circuit

6

High voltage

6

Modulation

6

Power bandwidth

6

Resonator

6

Tetrode

6

Antenna (radio)

5

Bandwidth (signal processing)

5

Behavioral modeling

5

Control theory

5

Duty cycle

5

Electric power transmission

5

Electromagnetic coil

5

Electronics

5

Intermodulation

5

LDMOS

5

Laser

5

Linear particle accelerator

5

Linearizer

5

Nuclear engineering

5

Power semiconductor device

5

Power-added efficiency

5

Transmission line

5

各个国家和地区发表的与“High Power RF Amplifiers”相关的论文的数量

各个国家和地区发表的与“High Power RF Amplifiers”相关的论文

论文数量

United States

美国

25

China

中国

8

United Kingdom

英国

6

Canada

加拿大

5

Poland

波兰

5

Germany

德国

4

Korea, Republic of

韩国

4

India

印度

3

Netherlands

荷兰

3

Switzerland

瑞士

2

Spain

西班牙

2

France

法国

2

Turkey

土耳其

2

Australia

澳大利亚

1

Czech Republic

捷克共和国

1

Greece

希腊

1

Israel

以色列

1

Iran

伊朗

1

Italy

意大利

1

Russia

俄罗斯

1

South Africa

南非

1

图，各个国家和地区在“High Power RF Amplifiers”领域发表的论文数量

参考学习书籍：

功率放大器是微波通信和雷达系统中最重要的组件之一。这本实用资源为工程师提供了有关微波功率放大器设计关键方面的专家指导。

这本综合性书籍提供了所有主要有源设备的描述，讨论了大信号特性，解释了所有关键的电路设计程序。

此外，本书还对设计参数与技术实现之间的联系提供了敏锐的见解，帮助专业人士以最有效的利用现有技术实现最佳解决方案。

本书涵盖了广泛的基本主题，从高功率放大器的要求、设备模型、相位噪声和功率合成器……到高效放大器、线性放大器设计、偏置电路和热设计。

（本人可以为个人和企业提供专利分析服务，找研究资料和参考书籍服务，相关领域的技术发展趋势洞察服务，以及市场需求和竞争环境分析服务，有需求者可以私信我）

相关问答

射频功率放大器,增加了气流的传送强度rf功率放大器中文名称叫射频功率放大器是各种无线发射机的重要组成部分。在发射机的前级电路中,调制振...

你指的负反馈放大器是不是在共射极电路的集电极和基极之间连接了负反馈电阻RF,RF的作用是把输出电压的一部分反馈给输入端与输入信号叠加,保证电路的稳定性,例...

[回答]放大器的增益会随着通过频率的上升下降。所以如果普通...所以如果普通放大器在10MHz的时候可能已经没有放大能力了。甚至开始衰减信号。还有射频器...

射频放大器的输入输出都需要良好的匹配才能稳定的工作,IC在设计时实现不了阻抗匹配,由外电路的电感,电容,电阻来匹配,包括分布电容,引线电感等参数。射频放大...

rf350是可以微波的,低频至4GHz电源电压2.7至3.5输入IP325dBm输入P1dB19dBm标准驱动电平dBm封装LFCSP该产品常用的工作频率范围是400至2700...

在RF电路中,“RF”是“RadioFrequency”的缩写,意思是射频。RF电路是指用于处理和放大射频信号的电路。射频信号是指频率在数十兆赫兹到数百兆赫兹之间的信号...

扩核器(Amplifier)是一种电子设备,用于将电信号的功率增强到需要的水平。它通常被用于音频放大器、射频放大器、功率放大器等领域。扩核器的基本原理是将输入...

电子放大器是一种将输入信号放大的设备,常见的电子放大器包括:运放放大器、功放、管式放大器、晶体管放大器、集成放大器等。运放放大器是一种高增益、低失真...

[最佳回答]1指的是输出级的电压增益,如果是负反馈电路就是接入负反馈后的电压增益,称为闭环电压增益.总是大于1,至少等于1.一般情况下取1.//不是除号.有点无语...

射频重构是指在无线通信系统中,通过重新配置射频信号的传输路径和参数,以优化信号传输质量和提高系统性能的一种技术。其目的是通过调整天线、放大器、滤波器...